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ZHANG Xiao-ling, XIE Xue-song, LÜ Zhang-zhi, LI Zhi-guo. Temperature Characteristics of AlGaN/GaN HEMT's Ni/Au Schottky Contact[J]. Journal of Beijing University of Technology, 2008, 34(4): 365-368. DOI: 10.3969/j.issn.0254-0037.2008.04.007
Citation: ZHANG Xiao-ling, XIE Xue-song, LÜ Zhang-zhi, LI Zhi-guo. Temperature Characteristics of AlGaN/GaN HEMT's Ni/Au Schottky Contact[J]. Journal of Beijing University of Technology, 2008, 34(4): 365-368. DOI: 10.3969/j.issn.0254-0037.2008.04.007
shu

Temperature Characteristics of AlGaN/GaN HEMT's Ni/Au Schottky Contact

  • College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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  • Received Date: December 17, 2006
  • Available Online: January 10, 2023
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  • The temperature characteristics of A1GaN/GaN heterosturture's Schottky contact is described by I-V measurement. At room temperature, Schottky barrier height is 0.75 eV, the ideality factor is 2.06. When the temperature rises, Schottky barrier height rises too, but the ideality factor decreases. The main reason is the effect of heterostructure and two dimension electronics gas(2DEG). When the forward current is 1 mA, the forward voltage at room temperature is 1.65 V. The temperature coefficent of the forward voltage between room temperature and 300 ℃ is - 1.6 mV/℃.
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