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XIE Xue-song, ZHANG Xiao-ling, LÜ Chang-zhi, WU Li, YUAN Ying, LI Zhi-guo, CAO Chun-hai. n-GaN Ohmic Contact With Cr/Au/Ni/Au[J]. Journal of Beijing University of Technology, 2005, 31(5): 449-451.
Citation: XIE Xue-song, ZHANG Xiao-ling, LÜ Chang-zhi, WU Li, YUAN Ying, LI Zhi-guo, CAO Chun-hai. n-GaN Ohmic Contact With Cr/Au/Ni/Au[J]. Journal of Beijing University of Technology, 2005, 31(5): 449-451.
shu

n-GaN Ohmic Contact With Cr/Au/Ni/Au

  • 1. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China;

  • 2. Nanjing Solid-state Devices Institute, Nanjing 210016, China

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  • Received Date: December 24, 2003
  • Available Online: November 21, 2022
    Graphical Abstract
    • Abstract
  • To obtain ohmic contact to n-GaN with a low contact resistivity, Cr/Au/Ni/Au metallic system that was fabricated in n-GaN materials has been developed. The contact resistivity of ohmic contact was tested and analyzed at different temperatures. The contact resistivity of Cr/Au/Ni/Au is about 0.32 mΩ·cm2 at room temperature. With the increasing of temperature, the contact resistivity of Cr/Au/Ni/Au increases a little. At 300℃, its contact resistivity is 0.65 mΩ-cm2. The ohmic contact is suitably used at high temperature.
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    • References (6)
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