Rapid Evaluation and Improvement of GaAs MESFETs Ohmic Contacts

A rapid evaluation method, temperature ramp method, for GaAs MPFETs ohmic contacts is proposed, and an automatic evaluation system is developed. Through this method and system, the activation energy for ohmic contacts degradation can be obtained at shorter time and less sample-cost compared with the traditional method, and the results are in agreement with those obtained by traditional methods. In accordance with the drawbacks of traditional AuGeNi/Au ohmic contacts, a new ohmic contacts system with TiN diffusion banter layer is proposed. Experiment results show that the reliability of ohmic contacts with TiN are greatly superior to that of traditionalAuGeNi/Au ohmic contacts.