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WU Yu, WANG Hao, CHENG Xu, KANG Bao-wei. Optimization of the Power Bipolar Integrated Device[J]. Journal of Beijing University of Technology, 2009, 35(9): 1168-1174.
Citation: WU Yu, WANG Hao, CHENG Xu, KANG Bao-wei. Optimization of the Power Bipolar Integrated Device[J]. Journal of Beijing University of Technology, 2009, 35(9): 1168-1174.
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Optimization of the Power Bipolar Integrated Device

  • College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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  • Received Date: March 13, 2008
  • Available Online: December 09, 2022
    Graphical Abstract
    • Abstract
  • Based on a 400 V power bipolar integrated device(BJT and a anti-parallel p-i-n diode integrated on the same chip) and through simulation and experimental test,some fundamental concepts and physical images were established concerning the influence of the parasitic lateral p-n-p transistor on the integrated device and the dependence of this influence on the distance between the main transistor and the internal diode.Finally,the optimized design of the above-mentioned distance was proposed.These provide a theoretical basis for understanding the issue and devising new methods to isolate the main transistor and the internal diode.
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    • References (11)
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