Temperature Dependence of Raman Cross Section for Stokes and Antistokes Process
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Graphical Abstract
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Abstract
The temperature dependence of Raman Cross section for both stokes and antis-tokes process is discussed. This dependence is used for the in-siru temperature measurement of LiNbO3 crystal, which turns out to have a good accuracy and to be useful for samples whose temperature can not be measured directly. In addition, according to this dependence, it is found that the order-disorder mechanism of BaTiO3 phase transition agrees with the experimental results better by comparing the temperature dependence of Raman cross section for several models.
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