Xu Xinfu, Zhai Leheng, Zhang Jianhua, Sun Zhuo, Hou Ge. Ionic Nitriding Process in HCD Apparatus[J]. Journal of Beijing University of Technology, 1993, 19(4): 39-42.
Citation:
Xu Xinfu, Zhai Leheng, Zhang Jianhua, Sun Zhuo, Hou Ge. Ionic Nitriding Process in HCD Apparatus[J]. Journal of Beijing University of Technology, 1993, 19(4): 39-42.
Xu Xinfu, Zhai Leheng, Zhang Jianhua, Sun Zhuo, Hou Ge. Ionic Nitriding Process in HCD Apparatus[J]. Journal of Beijing University of Technology, 1993, 19(4): 39-42.
Citation:
Xu Xinfu, Zhai Leheng, Zhang Jianhua, Sun Zhuo, Hou Ge. Ionic Nitriding Process in HCD Apparatus[J]. Journal of Beijing University of Technology, 1993, 19(4): 39-42.
A DLKD-800 HCD apparatus is improved for study on the complex technology of ionitriding-ion plating TiN only in the HCD apparatus. With W6Mo5Cr4V2 specimens, a series of ionitriding tests are made in the improved DLKD-800. The tests yield ideal results and have laid the foundation for investigation on the complex technology.
DownLoad: