Influence of Plasma Treatment on Performances of the GaN-based Light-emitting Diodes

The authors investigated the effects of plasma treatment on ICP etch damage.The GaN-based LED was put in PECVD chamber at different temperature and treated by N₂,N₂O and NH₃ plasma under different RF power.It is observed that,in the case of 100℃and 20 W RF power,the optical and electrical characteristics of GaN-LEDs were improved after the N₂O plasma treatment,the optical and electrical characteristics of GaN-LEDs were improved slightly after the N₂ plasma treatment,while that of the GaN-LEDs were significantly degraded after the NH₃ plasma treatment.