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    Li Zhiguo, Cheng Yaohai, Sun Yinghua, Guo Weiling, Li Xuexin, Li Zhiyong, Dai Cizhuang. The Analysis of Bipolar Transistor hFE Feilure Under Low Temperature and Its Reliability in Application[J]. Journal of Beijing University of Technology, 1996, 22(4): 25-30.
    Citation: Li Zhiguo, Cheng Yaohai, Sun Yinghua, Guo Weiling, Li Xuexin, Li Zhiyong, Dai Cizhuang. The Analysis of Bipolar Transistor hFE Feilure Under Low Temperature and Its Reliability in Application[J]. Journal of Beijing University of Technology, 1996, 22(4): 25-30.
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    The Analysis of Bipolar Transistor hFE Feilure Under Low Temperature and Its Reliability in Application

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    • The effect of heavy doping on common emitter direct-current foreward currentgain(hFE) of bipolar transistor was investigated. hFE under low temperature was measured and calculated. And the difference between the hFE measured and the calculated were analysed. The method to improve hFE temperature dependences is pointed out based on the above work.
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