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    Chen Jianxin, Yuan Ying, Du Chunxia, Zhang Shiming, Shen Guangdi, Zhao Yuqin. Study of Si/SiGe Etching Stop Technique and Its Application in Fabricating the Si/SiGe HBTs[J]. Journal of Beijing University of Technology, 1996, 22(2): 55-60.
    Citation: Chen Jianxin, Yuan Ying, Du Chunxia, Zhang Shiming, Shen Guangdi, Zhao Yuqin. Study of Si/SiGe Etching Stop Technique and Its Application in Fabricating the Si/SiGe HBTs[J]. Journal of Beijing University of Technology, 1996, 22(2): 55-60.
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    Study of Si/SiGe Etching Stop Technique and Its Application in Fabricating the Si/SiGe HBTs

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    • The experimental study on SiGe/Si etching stop technique is made and the etching mechanism is discussed.The ratio of Si layer etching rate to that of SiGe layer can be 30:1 under the condition of certain etchant and constant temperature.This SiGe/Si etching stop technique is extremely functional in fabricating SiGe/Si HBTs.
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