980nm InGaAs Strained Quantum Well Lasers and Pumped Source for Erbium Doped Fiber Amplifier

High quality InGaAs/GaAs strained quantum well materials and fabricatedquantum well lasers are developed using solid state molecular beam epitaxy technology.The photoluminescence FWHM of strained quantum well materials are 32meV and 2.4meV, under room temperature and 10K respectively. The threshold current and differential quantum efficiency of ridge waveguide quantum well lasers with coated film are 15mA and 0.8W/A, respectively. The linear output power is more than 120mW.The 100mW output power with fundamental mode is achieved. The output power of 40~60mW is demonstrated through coupling with Er-doped fiber. The emission wavelength is near 977nm.