chen Guanghua, Yan Hui, Ma Guobin, Chen Peng. Characterization of C60 Films Grown via Hot-wall Epitaxy[J]. Journal of Beijing University of Technology, 1998, 24(1): 9-12.
Citation:
chen Guanghua, Yan Hui, Ma Guobin, Chen Peng. Characterization of C60 Films Grown via Hot-wall Epitaxy[J]. Journal of Beijing University of Technology, 1998, 24(1): 9-12.
chen Guanghua, Yan Hui, Ma Guobin, Chen Peng. Characterization of C60 Films Grown via Hot-wall Epitaxy[J]. Journal of Beijing University of Technology, 1998, 24(1): 9-12.
Citation:
chen Guanghua, Yan Hui, Ma Guobin, Chen Peng. Characterization of C60 Films Grown via Hot-wall Epitaxy[J]. Journal of Beijing University of Technology, 1998, 24(1): 9-12.
Characterization of C60 Films Grown via Hot-wall Epitaxy
The growth characteristics of C60 films grown at different substrate temperatures via hot-wall epitaxy is investigated. Upon X-ray diffraction, it rurns out tbat entirely (111) oriented C60 films are epitaxially grown on fluorophlogopite (001) plane at substrate temperatures higher that 160℃. Moreover, variations of crystalline integrity and crystal size with substrate temperatures are discussed.
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