Calculation of Band Structure of InGaAs/GaAs Strained Quantum Wells

SONG Yan-rong; HUA Ling-ling; ZHANG Peng; ZHANG Xiao

doi:10.3969/j.issn.0254-0037.2011.04.014

Journal of Beijing University of Technology > 2011 > 37(4): 565-569. > DOI: 10.3969/j.issn.0254-0037.2011.04.014

SONG Yan-rong, HUA Ling-ling, ZHANG Peng, ZHANG Xiao. Calculation of Band Structure of InGaAs/GaAs Strained Quantum Wells[J]. Journal of Beijing University of Technology, 2011, 37(4): 565-569. DOI: 10.3969/j.issn.0254-0037.2011.04.014

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Calculation of Band Structure of InGaAs/GaAs Strained Quantum Wells

1. College of Applied Sciences, Beijing University of Technology, Beijing 100124, China;
2. Basis Department, North China Institute of Science and Technology, Yanjiao 101601, Hebei, China

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Received Date: March 22, 2009
Available Online: November 18, 2022

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In order to further optimize the performance of semiconductor lasers,the band structure which influences many parameters of semiconductor lasers is discussed.Taking the InGaAs/GaAs strained quantum wells for an example,we obtain the conduction-band structures and the valence-band structures by using the finite difference method to solve the problem of 6×6 Luttinger-Kohn Hamiltonian which is considered the valence band mixing effect.The results show that the strain has changed the huge asymmetry between the light conduction band effective mass and the very heavy valence band effective mass in the traditional unstrained quantum well lasers.It is more conducive to improving the laser performance.
- strained quantum well,
- band structure,
- 6×6 Luttinger-Kohn Hamiltonian,
- finite difference method

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