SiGe/Si Heterostructure Bipolar Transistors (HBTs) with <i>f</i><sub>T</sub> up to 9GHz

Zou Deshu; Chen Jianxin; Gao Guo; Shen Guangdi; Du Jinyu; Wang Dongfeng; Zhang Shiming; Yuan Ying

Zou Deshu, Chen Jianxin, Gao Guo, Shen Guangdi, Du Jinyu, Wang Dongfeng, Zhang Shiming, Yuan Ying. SiGe/Si Heterostructure Bipolar Transistors (HBTs) with fT up to 9GHz[J]. Journal of Beijing University of Technology, 1996, 22(4): 55-59.

Citation:

Zou Deshu, Chen Jianxin, Gao Guo, Shen Guangdi, Du Jinyu, Wang Dongfeng, Zhang Shiming, Yuan Ying. SiGe/Si Heterostructure Bipolar Transistors (HBTs) with fT up to 9GHz[J]. Journal of Beijing University of Technology, 1996, 22(4): 55-59.

Citation:

Zou Deshu, Chen Jianxin, Gao Guo, Shen Guangdi, Du Jinyu, Wang Dongfeng, Zhang Shiming, Yuan Ying. SiGe/Si Heterostructure Bipolar Transistors (HBTs) with fT up to 9GHz[J]. Journal of Beijing University of Technology, 1996, 22(4): 55-59.

SiGe/Si Heterostructure Bipolar Transistors (HBTs) with f_T up to 9GHz

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SiGe/Si HBT's design is considered; the processing of a double mesa struncture is discussed. SiGe/Si HBTs with different sizes are fabricated, in which the maximum f_T is up to 9GHz. Measurement shows that the distribution parameters are the main factors which influcence f_T.

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SiGe/Si Heterostructure Bipolar Transistors (HBTs) with fT up to 9GHz

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SiGe/Si Heterostructure Bipolar Transistors (HBTs) with f_T up to 9GHz