Temperature Test of Metallization In Semiconductor Devices

The sample temperatures were tested in the metallization electromigration experiment. The tests show: that with a metal stripe under the same oven temperature of 150℃, When current density was 3×10⁶A/cm², the stripe temperature was 32.5℃ higher than its ambient temperature; while the current density changed to 5×10⁶A/cm²,the temperature of the stripe became 100℃ higher than its ambient temperature. Thus the temperature-test method of doped resistance is put forward to monitor and control accurately temperature of metal stripes, and a new dynamic current-ramp method for current density exponent is developed by this method.