Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis

AlGalnP/ GalnP strained Quantum well laser device emitting at about 680 nm wavelength has been fabricated and analyzed. Slope efficiency of 0.56 W/A and strip red output power as high as 100 mW, vertical and parallel far field divergence angle of 31° and 9° respectively are obtained for 20 μm ridge laser device without coating. For a 4 μm uncoated deep eroded laser device, the slope efficiency is 0.4 W/A, the output power about 10 mW, the peak wavelength 681 nm and the width 0.5 nm. The characteristic temperature is between 120-190 K for the device of different cavity length. The total internal losses of those devices arc 4.27/ cm, the internal quantum efficiency is 45%.