Analysis of Power Trench MOSFET With Lower On-resistance

A new structure of trench MOSFET with lower on-resistance is proposed in this paper.The influence of epitaxy layer impurity concentration over on-resistance and breakdown voltage of the device is discussed in detail by device simulation.Parameters of an optimized device are obtained by simulation and comparison with traditional structure.It shows that the new structure of trench MOSFET achieves the reduction of the on-resistance by 18.8% in the on-state when compared with conventional trench MOSFET.