Circuit Simulation Model of the Insulated Gate Bipolar Transistor

Based on the existing component models in the Pspice software package and typical data of the IGBT handbook, a combined model for Insulated Gate Bipolar Transistor (IGBT) is established, in which a non-linear capacitor is introduced to represent the parasitic capacitance of components. Using this model, computerized simulation is conducted for static and dynamic characteristics of the IGBT. The simulation results are validated by hardware experiments.