Elementary Analysis on the Flow in Single-Wafer Silicon CVD Reactor

WANG Qin-meng; LIU Zhao-miao; LUO Mu-chang

doi:10.3969/j.issn.0254-0037.2001.04.023

WANG Qin-meng, LIU Zhao-miao, LUO Mu-chang. Elementary Analysis on the Flow in Single-Wafer Silicon CVD Reactor[J]. Journal of Beijing University of Technology, 2001, 27(4): 483-485. DOI: 10.3969/j.issn.0254-0037.2001.04.023

Citation:

WANG Qin-meng, LIU Zhao-miao, LUO Mu-chang. Elementary Analysis on the Flow in Single-Wafer Silicon CVD Reactor[J]. Journal of Beijing University of Technology, 2001, 27(4): 483-485. DOI: 10.3969/j.issn.0254-0037.2001.04.023

Citation:

WANG Qin-meng, LIU Zhao-miao, LUO Mu-chang. Elementary Analysis on the Flow in Single-Wafer Silicon CVD Reactor[J]. Journal of Beijing University of Technology, 2001, 27(4): 483-485. DOI: 10.3969/j.issn.0254-0037.2001.04.023

Elementary Analysis on the Flow in Single-Wafer Silicon CVD Reactor

Graphical Abstract

Graphical Abstract

Abstract

Abstract

Flow pattern in single-wafer silicon CVD reactors during the process of vapour deposition is tentatively studied through the numerical solution of the 3-D laminar Navier-Stokes equations. The research indicates that Non-axisymmetric flows may occur in the axi-symmetric solid owing to buoyancy effects alone.

FullText(HTML)

References (0)

Elementary Analysis on the Flow in Single-Wafer Silicon CVD Reactor

Graphical Abstract

Abstract

Catalog

Export File

Citation

Format

Content