Preparation and Field Emission Properties of Low-cost and High-crystalline GaN Nanowire Flexible Films

The aim of this study is to investigate the feasibility of using non precious metal Cu as a catalyst instead of precious metal Au to prepare highly crystalline GaN nanowires on flexible carbon films, and to investigate their field emission characteristics and mechanisms. Non precious metal Cu instead of precious metal Au is used as a catalyst to prepare a flexible carbon film with a diameter of approximate 20-100 nm and a length of approximate 3-15 μm. The catalytic growth mechanism of GaN nanowire thin films was obtained by adjusting the structure and size of high crystalline GaN nanowires with m and process parameters. By studying its field emission characteristics, it is found that its field emission performance is closely related to its nanostructure, and the thickness of the catalyst and the bending state of the thin film can significantly affect its field emission performance. The field emission current of GaN nanowire flexible films prepared using Cu as a catalyst has good stability. This study provides a reference idea for low-cost preparation methods of GaN nanowires, and also provides feasible technical means for the production of field emission flexible devices.