Resistive Switching Effect of BiFeO
						<sub>3</sub> Thin Film Under the Voltage Below the Coercive Voltage

ZHU Hui; ZHANG Yingqiao; WANG Pengfei; BAI Zilong; MENG Xiao; CHEN Yueyuan; QI Qiong

doi:10.11936/bjutxb2016080028

Journal of Beijing University of Technology > 2017 > 43(3): 443-447. > DOI: 10.11936/bjutxb2016080028

ZHU Hui, ZHANG Yingqiao, WANG Pengfei, BAI Zilong, MENG Xiao, CHEN Yueyuan, QI Qiong. Resistive Switching Effect of BiFeO ₃ Thin Film Under the Voltage Below the Coercive Voltage[J]. Journal of Beijing University of Technology, 2017, 43(3): 443-447. DOI: 10.11936/bjutxb2016080028

Citation:

PDF (409 KB)

Resistive Switching Effect of BiFeO ₃ Thin Film Under the Voltage Below the Coercive Voltage

1.
College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
2.
College of Microelectronics, Fudan University, Shanghai 200433, China
3.
National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

More Information

Received Date: August 11, 2016
Available Online: May 23, 2023

Graphical Abstract

Abstract

Abstract

To study the resistive effect of the Au/BiFeO ₃/SrRuO ₃ fabricated by the pulsed laser deposition on the SrTiO ₃ substrate, the resistive effect was characterized by the I-V curves. Due to the different work function between BiFeO ₃ and Au, BiFeO ₃ and SrRuO ₃, the stable Shottky contact was formed between the contact surface of Au/BiFeO ₃ and BiFeO ₃/SrRuO ₃. The Shottky barrier height was changed by application of external voltage to control the filling status of trap levels. Results show that from the I-V curve the film displays the resistive switching behavior under the voltage below the coercive voltage, with the resistance ratio as large as three orders. Through the fitting of I-V curves by different conduction mechanisms, it is confirmed that the conduction of the film is dominated by the space charge limited current (SCLC). The trapping effect was proposed as the resistive switching mechanism for the BiFeO ₃ thin film below the coercive voltage.
- Fe-resistive random access memory,
- resistive switching effect,
- space charge limited current,
- trapping effect

FullText(HTML)

References (18)

References

[1]	MOLASG,BOCQUETM,VIANELLOE,et al.Reliability of charge trapping memories with high-k control dielectrics[J].Microelectronic Engineering,2009,86(7):1796-1803.
[2]	WANGJ,NEATON JB,ZHENGH,et al.Epitaxial BiFeO3 multiferroic thin film heterostructures[J].Science,2003,299(5613):1719-1722.
[3]	LIM,ZHUGEF,ZHUX,et al.Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches[J].Nanotechnology,2010,21(42):425202.
[4]	CHANTHBOUALAA,CRASSOUSA,GARCIAV,et al.Solid-state memories based on ferroelectric tunnel junctions[J].Nature nanotechnology,2012,7(2):101-104.
[5]	ZHUY,LIM,ZHOUH,et al.Nonvolatile bipolar resistive switching in an Ag/TiO2/Nb:SrTiO3/In device[J].Journal of Physics D: Applied Physics,2012,45(37):375303.
[6]	JIANG XL,ZHAO YG,ZHANGX,et al.Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures[J].Applied Physics Letters,2013,102(23):233501.
[7]	JIANG AQ,WANGC,JIN KJ,et al.A resistive memory in semiconducting BiFeO3 thin-film capacitors[J].Advanced Materials,2011,23(10):1277-1281.
[8]	SULLAPHENJ,BOGLEK,CHENGX,et al.Interface mediated resistive switching in epitaxial NiO nanostructures[J].Applied Physics Letters,2012,100(20):203115.
[9]	YANGH,JAINM,SUVOROVA NA,et al.Temperature-dependent leakage mechanisms of Pt/BiFeO3/SrRuO3 thin film capacitors[J].Applied Physics Letters,2007,91(7):701.
[10]	SHUAIY,OUX,LUOW,et al.Nonvolatile multilevel resistive switching in Ar+ irradiated BiFeO3 thin films[J].IEEE Electron Device Lett,2013,34(1):54-56.
[11]	WUJ,WANGJ,XIAOD,et al.Leakage mechanism of cation-modified BiFeO3 thin film[J].Aip Advances,2011,1(2):022138.
[12]	PABST GW,MARTIN LW,CHU YH,et al.Leakage mechanisms in BiFeO3 thin films[J].Applied Physics Letters,2007,90(7):2902.
[13]	SHANG DS,WANGQ,CHEN LD,et al.Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures[J].Physical Review B,2006,73(24):245427.
[14]	CHENX,WUG,JIANGP,et al.Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications[J].Applied Physics Letters,2009,94(3):033501.
[15]	CLARK SJ,ROBERTSONJ.Band gap and Schottky barrier heights of multiferroic BiFeO3[J].Applied Physics Letters,2007,90(13):132903.
[16]	MOUBAHR,ROUSSEAUO,COLSOND,et al.Photoelectric effects in single domain BiFeO3 crystals[J].Advanced Functional Materials,2012,22(22):4814-4818.
[17]	FANGX,KOBAYASHIT.Study of pulsed laser deposition of RuO2 and SrRuO3 thin films[J].Applied Physics A,1999,69(1):S587-S590.
[18]	刘恩科,朱秉升,罗晋生.半导体物理学[M].北京:国防工业出版社,1984:62-106.