Effects of Lateral Structure Parameters on Small Signal Model Parameters of SiGe HBTs

The effects of lateral structure parameters including emitter width,length and stripe number on small signal model parameters of SiGe HBTs were analyzed. Parameters Y for different sizes of Jazz 0. 35μm BiCMOS SiGe HBT were obtained,and the parameters of small signal model were correspondingly calculated.Resultsshow that as the emitter width,length and stripe number increase,the resistance in the model decreases while the capacitance and transconductance increase. Moreover,the effect of SiGe HBTs lateral structure parameters on performance of the synthesized active inductor was analyzed. The results have a reference meaning for the selection of lateral structure parameters of active device used in synthesis of a active inductor.