Abstract: A type of silicon on insulator (SOI) trench anode lateral insulated-gate bipolar transistor (TA-LIGBT) with dual-epi layers is introduced in this paper.TA-LIGBT exploits the structure of trench electrode to decrease the cell size and the current flowlines of TA-LIGBT are uniformly distributed in the N-drift region.TA-LIGBT has achieved lower on-state drop and higher breakdown voltage on thin epitaxial layer because dual-epi layer can widen the depletion region.Optimal structure is obtained for 500 V TA-LIGBT through simulation.Characteristics of the device are also given.Results show that the device has a breakdown voltage above 500 V,a forward voltage of 0.2 V for V_gs of 10 V,and the specific on-resistance of 123.6 mΩ·cm².