Design and Optimization of 500 V Trench Anode LIGBT
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摘要: 介绍一种双外延绝缘体上硅(silicon on insulator,SOI)结构的沟槽阳极横向绝缘栅双极型晶体管(trenchanode lateral insulated-gate bipolar transistor,TA-LIGBT).沟槽阳极结构使电流在N型薄外延区几乎均匀分布,并减小了元胞面积;双外延结构使漂移区耗尽层展宽,实现了薄外延层上高耐压低导通压降器件的设计.通过器件建模与仿真得到最佳TA-LIGBT的结构参数和模拟特性曲线,所设计器件击穿电压大于500 V,栅源电压Vgs=10 V时导通压降为0.2 V,特征导通电阻为123.6 mΩ.cm2.Abstract: A type of silicon on insulator (SOI) trench anode lateral insulated-gate bipolar transistor (TA-LIGBT) with dual-epi layers is introduced in this paper.TA-LIGBT exploits the structure of trench electrode to decrease the cell size and the current flowlines of TA-LIGBT are uniformly distributed in the N-drift region.TA-LIGBT has achieved lower on-state drop and higher breakdown voltage on thin epitaxial layer because dual-epi layer can widen the depletion region.Optimal structure is obtained for 500 V TA-LIGBT through simulation.Characteristics of the device are also given.Results show that the device has a breakdown voltage above 500 V,a forward voltage of 0.2 V for Vgs of 10 V,and the specific on-resistance of 123.6 mΩ·cm2.
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