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    田波, 吴郁, 胡冬青, 亢宝位. 采用优化的腐蚀工艺对TiSi2接触特性的改善[J]. 北京工业大学学报, 2009, 35(6): 738-741.
    引用本文: 田波, 吴郁, 胡冬青, 亢宝位. 采用优化的腐蚀工艺对TiSi2接触特性的改善[J]. 北京工业大学学报, 2009, 35(6): 738-741.
    shu
    TIAN Bo, WU Yu, HU Dong-qing, KANG Bao-wei. Improvement on Contact Characteristic of TiSi_2 by Using Optimized Etching Process[J]. Journal of Beijing University of Technology, 2009, 35(6): 738-741.
    Citation: TIAN Bo, WU Yu, HU Dong-qing, KANG Bao-wei. Improvement on Contact Characteristic of TiSi_2 by Using Optimized Etching Process[J]. Journal of Beijing University of Technology, 2009, 35(6): 738-741.
    shu

    采用优化的腐蚀工艺对TiSi2接触特性的改善

    Improvement on Contact Characteristic of TiSi_2 by Using Optimized Etching Process

      摘要
    • 摘要: 针对传统TiSi2工艺中RCA1(NH4OH:H2O2:H2O)溶液对于TiN/Ti与TiSi2的选择性不好会造成硅化物的损失、提高接触电阻的问题,提出一种采用2次选择性腐蚀的工艺方法进行改善.通过具体的工艺实验证明,与传统工艺方法相比,该工艺方法可以在保持低漏电流的前提下,有效减少TiSi2的损失,使得方块电阻降低约18%.该工艺方法具有简单易行的特点,适用于大规模工业生产.

       

      Abstract: A optimized process consisting of two-step selective etching is proposed to solve the problem that the selectivity between TiN/Ti and TiSi2 is poor with the conventional RCA1(NH4OH:H2O2:H2O) solution and results in a loss of a substantial part of the formed silicide thickness and hence in an increase of the contact resistance.Compared to the traditional process, this process allows an important reduction of the TiSi2 thickness loss and hence, makes the reduction of the sheet resistance about 18%.Furthermore, this process is feasible and controllable, which makes it adapt to manufacture in industry.

       

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