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    张时明, 邹德恕, 陈建新, 高国, 杜金玉, 韩金茹, 董欣, 袁颍, 王东凤, 沈光地, 倪卫新, 汉森. SiGe/Si HBT的直流特性分析[J]. 北京工业大学学报, 1996, 22(4): 20-24.
    引用本文: 张时明, 邹德恕, 陈建新, 高国, 杜金玉, 韩金茹, 董欣, 袁颍, 王东凤, 沈光地, 倪卫新, 汉森. SiGe/Si HBT的直流特性分析[J]. 北京工业大学学报, 1996, 22(4): 20-24.
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    Zhang Shiming, Zou Deshu, Chen Jianxin, Gao Guo, Du Jinyu, Han Jinyu, Dong Xin, Yuan Ying, Wang Dongfeng, Shen Guangdi, Ni Weixin, Hansson G V. An Analysis of SiGe/Si HBT's DC Characteristics[J]. Journal of Beijing University of Technology, 1996, 22(4): 20-24.
    Citation: Zhang Shiming, Zou Deshu, Chen Jianxin, Gao Guo, Du Jinyu, Han Jinyu, Dong Xin, Yuan Ying, Wang Dongfeng, Shen Guangdi, Ni Weixin, Hansson G V. An Analysis of SiGe/Si HBT's DC Characteristics[J]. Journal of Beijing University of Technology, 1996, 22(4): 20-24.
    shu

    SiGe/Si HBT的直流特性分析

    An Analysis of SiGe/Si HBT's DC Characteristics

      摘要
    • 摘要: 应用"掺杂工程"和"带隙工程"各自的特点,设计了一种独特的基区双向高速输运的SiGe/Si HBT层结构,并利用此结构在3μm工艺线上做出了性能良好的SiGe/Si HBT。其主要直流参数为:室温共发射极最大电流增益βmax(300K)可达300,低温βmax(77K)可达8000,厄利电压300V,漏电流在nA量级,均为国际先进水平。同时,给出了SiGe/SiHBT的室温(大注入,小注入),低温(大注入,小注入)的输出特性曲线,进行了对比分析,详细讨论了影响室温β,低温β及其它直流参数的主要因素。

       

      Abstract: The SiGe/Si HBT's layer structure with a novel high speed base transportation was designed upon considering both doping engineering and band engineering, On this structure, the SiGe/Si HBT with advanced performance was fabricated in 3μm processing line. Its main DC characteristics are shown as follows:The maximum current gain βmax (at room temperature) is up to 300; the maximum current gain βmax (at 77K)is 8000; the early voltage is 300V and the leakage current is at nA level. Furthermore,the output characteristics at room temperature (small injection and large injection) and at 77K (small injection and large injection)are shown, and the main factors which influence the current gain are discussed.

       

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