单晶硅化学气相沉积反应器流场初探

Elementary Analysis on the Flow in Single-Wafer Silicon CVD Reactor

摘要: 对单晶硅化学气相沉积(CVD)反应器在沉积过程中的流场进行了初步分析.通过数值求解三维层流 Navier-Stokes方程,研究了反应器内浮力效应所引起的流场对称性破坏.结果表明,由于存在浮力效应,轴对称几何体中也会发生非轴对称流场分布,从而影响单晶硅的均匀生长.

Abstract: Flow pattern in single-wafer silicon CVD reactors during the process of vapour deposition is tentatively studied through the numerical solution of the 3-D laminar Navier-Stokes equations. The research indicates that Non-axisymmetric flows may occur in the axi-symmetric solid owing to buoyancy effects alone.