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    李志国, 程尧海, 孙英华, 郭伟玲, 李学信, 李志勇, 戴慈壮. 双极晶体管hFE低温失效分析及使用可靠性[J]. 北京工业大学学报, 1996, 22(4): 25-30.
    引用本文: 李志国, 程尧海, 孙英华, 郭伟玲, 李学信, 李志勇, 戴慈壮. 双极晶体管hFE低温失效分析及使用可靠性[J]. 北京工业大学学报, 1996, 22(4): 25-30.
    shu
    Li Zhiguo, Cheng Yaohai, Sun Yinghua, Guo Weiling, Li Xuexin, Li Zhiyong, Dai Cizhuang. The Analysis of Bipolar Transistor hFE Feilure Under Low Temperature and Its Reliability in Application[J]. Journal of Beijing University of Technology, 1996, 22(4): 25-30.
    Citation: Li Zhiguo, Cheng Yaohai, Sun Yinghua, Guo Weiling, Li Xuexin, Li Zhiyong, Dai Cizhuang. The Analysis of Bipolar Transistor hFE Feilure Under Low Temperature and Its Reliability in Application[J]. Journal of Beijing University of Technology, 1996, 22(4): 25-30.
    shu

    双极晶体管hFE低温失效分析及使用可靠性

    The Analysis of Bipolar Transistor hFE Feilure Under Low Temperature and Its Reliability in Application

      摘要
    • 摘要: 论述了影响双极晶体管电流增益hFE低温下降的重掺杂效应,结合具体器件测试并计算出了hFE的低温下降值,对实测值与计算值的差异进行了分析。最后指出了改进hFE温度特性的具体途径。

       

      Abstract: The effect of heavy doping on common emitter direct-current foreward currentgain(hFE) of bipolar transistor was investigated. hFE under low temperature was measured and calculated. And the difference between the hFE measured and the calculated were analysed. The method to improve hFE temperature dependences is pointed out based on the above work.

       

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