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    陈建新, 袁颖, 杜春霞, 张时明, 赵玉琴, 沈光地. Si/SiGe腐蚀停止技术的研究及其在SiGe/Si HBT工艺中的应用[J]. 北京工业大学学报, 1996, 22(2): 55-60.
    引用本文: 陈建新, 袁颖, 杜春霞, 张时明, 赵玉琴, 沈光地. Si/SiGe腐蚀停止技术的研究及其在SiGe/Si HBT工艺中的应用[J]. 北京工业大学学报, 1996, 22(2): 55-60.
    shu
    Chen Jianxin, Yuan Ying, Du Chunxia, Zhang Shiming, Shen Guangdi, Zhao Yuqin. Study of Si/SiGe Etching Stop Technique and Its Application in Fabricating the Si/SiGe HBTs[J]. Journal of Beijing University of Technology, 1996, 22(2): 55-60.
    Citation: Chen Jianxin, Yuan Ying, Du Chunxia, Zhang Shiming, Shen Guangdi, Zhao Yuqin. Study of Si/SiGe Etching Stop Technique and Its Application in Fabricating the Si/SiGe HBTs[J]. Journal of Beijing University of Technology, 1996, 22(2): 55-60.
    shu

    Si/SiGe腐蚀停止技术的研究及其在SiGe/Si HBT工艺中的应用

    Study of Si/SiGe Etching Stop Technique and Its Application in Fabricating the Si/SiGe HBTs

      摘要
    • 摘要: 对SiGe/Si腐蚀停止技术进行了大量的实验研究,分析了腐蚀的化学机理,并在一定的腐蚀液浓度和温度下,获得了Si和SiGe的腐蚀速率比大于30的结果.该技术极宜在SiGe/SiHBT制作中应用.

       

      Abstract: The experimental study on SiGe/Si etching stop technique is made and the etching mechanism is discussed.The ratio of Si layer etching rate to that of SiGe layer can be 30:1 under the condition of certain etchant and constant temperature.This SiGe/Si etching stop technique is extremely functional in fabricating SiGe/Si HBTs.

       

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