高级检索
    徐遵图, 沈光地, 徐俊英, 杨国文, 张敬明, 肖建伟, 何晓曦, 陈良惠. 980nm InGaAs应变量子阱激光器和掺铒光纤放大器用泵浦源[J]. 北京工业大学学报, 1996, 22(4): 48-54.
    引用本文: 徐遵图, 沈光地, 徐俊英, 杨国文, 张敬明, 肖建伟, 何晓曦, 陈良惠. 980nm InGaAs应变量子阱激光器和掺铒光纤放大器用泵浦源[J]. 北京工业大学学报, 1996, 22(4): 48-54.
    shu
    Xu Zuntu, Shen Guangdi, Xu Zunying, Yang Guo, ZhangJingming, Xiao Jianwei, He Xiaoxi, Chen Lianghui. 980nm InGaAs Strained Quantum Well Lasers and Pumped Source for Erbium Doped Fiber Amplifier[J]. Journal of Beijing University of Technology, 1996, 22(4): 48-54.
    Citation: Xu Zuntu, Shen Guangdi, Xu Zunying, Yang Guo, ZhangJingming, Xiao Jianwei, He Xiaoxi, Chen Lianghui. 980nm InGaAs Strained Quantum Well Lasers and Pumped Source for Erbium Doped Fiber Amplifier[J]. Journal of Beijing University of Technology, 1996, 22(4): 48-54.
    shu

    980nm InGaAs应变量子阱激光器和掺铒光纤放大器用泵浦源

    980nm InGaAs Strained Quantum Well Lasers and Pumped Source for Erbium Doped Fiber Amplifier

      摘要
    • 摘要: 利用分子束外延技术研制出了高质量InGaAs/GaAs应变量子阱材料及量子阱激光器,在室温和10K温度下,应变量子阱材料的光荧光峰值半宽分别为32meV和2.4meV,宽接触激光器的阈值电流密度低达140A/cm2。脊形波导窄条形量子阱激光器的阈值电流和微分量子效率分别为15mA和0.8W/A,线性输出功率大于120mw,基横模输出功率可达100mW。InGaAs应变量子阱激光器和单模光纤进行了耦合,其组合件出纤光功率典型值为40mW,最大值可达60mW。显示出了高的基横模输出功率和高的耦合效率。其组合件在40mW下,中心发射波长在977nm,成功地研制出适于掺铒光纤放大器用的应变量子阱激光器泵浦源。

       

      Abstract: High quality InGaAs/GaAs strained quantum well materials and fabricatedquantum well lasers are developed using solid state molecular beam epitaxy technology.The photoluminescence FWHM of strained quantum well materials are 32meV and 2.4meV, under room temperature and 10K respectively. The threshold current and differential quantum efficiency of ridge waveguide quantum well lasers with coated film are 15mA and 0.8W/A, respectively. The linear output power is more than 120mW.The 100mW output power with fundamental mode is achieved. The output power of 40~60mW is demonstrated through coupling with Er-doped fiber. The emission wavelength is near 977nm.

       

      • HTML全文
      • 参考文献(0)
      • 相关文章
      • 施引文献
    • 资源附件(0)

    /

    返回文章
    返回