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    陈光华, 严辉, 马国斌, 陈鹏. 热壁外延C60膜的特性研究[J]. 北京工业大学学报, 1998, 24(1): 9-12.
    引用本文: 陈光华, 严辉, 马国斌, 陈鹏. 热壁外延C60膜的特性研究[J]. 北京工业大学学报, 1998, 24(1): 9-12.
    shu
    chen Guanghua, Yan Hui, Ma Guobin, Chen Peng. Characterization of C60 Films Grown via Hot-wall Epitaxy[J]. Journal of Beijing University of Technology, 1998, 24(1): 9-12.
    Citation: chen Guanghua, Yan Hui, Ma Guobin, Chen Peng. Characterization of C60 Films Grown via Hot-wall Epitaxy[J]. Journal of Beijing University of Technology, 1998, 24(1): 9-12.
    shu

    热壁外延C60膜的特性研究

    Characterization of C60 Films Grown via Hot-wall Epitaxy

      摘要
    • 摘要: 研究了不同衬底温度下C60膜的热壁外延生长特性.X射线衍射结果表明,当衬底温度高于160℃时,在氟金云母(001)面上外延生长出完全(111)取向了C60膜,此外,对薄膜结晶的完整性及晶粒尺寸的随温度的变化进行了讨论.

       

      Abstract: The growth characteristics of C60 films grown at different substrate temperatures via hot-wall epitaxy is investigated. Upon X-ray diffraction, it rurns out tbat entirely (111) oriented C60 films are epitaxially grown on fluorophlogopite (001) plane at substrate temperatures higher that 160℃. Moreover, variations of crystalline integrity and crystal size with substrate temperatures are discussed.

       

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