低压ZnO变阻器的研究

周亚栋, 杨燕玫. 低压ZnO变阻器的研究[J]. 北京工业大学学报, 1994, 20(1): 111-117.

引用本文:

周亚栋, 杨燕玫. 低压ZnO变阻器的研究[J]. 北京工业大学学报, 1994, 20(1): 111-117.

Zhou Yadong, Yang Yanmei. Study of Low Voltage ZnO Vavistor[J]. Journal of Beijing University of Technology, 1994, 20(1): 111-117.

Citation:

Zhou Yadong, Yang Yanmei. Study of Low Voltage ZnO Vavistor[J]. Journal of Beijing University of Technology, 1994, 20(1): 111-117.

Study of Low Voltage ZnO Vavistor

摘要: 研究了掺杂物对ZnO变阻器电学性能(标称电压V_1mA和非线性系数α)的影响,用双肖特基势垒模型和隧道效应解释了其微量观机制,获得了V_1mA<20V,α>20的低压ZnO变阻器.

Abstract: The influence of various additives on the electrical properties of ZnO varister(V_1mA and α) are investigated. The micromedchanism are expleined by double shottky potentical barrier and tunnel effect. A varistor of V_1mA＞20V and nonlinearity coefficient α＞20 are prepared successfully.

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