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    邹德恕, 陈建新, 高国, 沈光地, 杜金玉, 王东凤, 张时明, 袁颍. fT为9GHz的SiGe/Si异质结双极晶体管[J]. 北京工业大学学报, 1996, 22(4): 55-59.
    引用本文: 邹德恕, 陈建新, 高国, 沈光地, 杜金玉, 王东凤, 张时明, 袁颍. fT为9GHz的SiGe/Si异质结双极晶体管[J]. 北京工业大学学报, 1996, 22(4): 55-59.
    shu
    Zou Deshu, Chen Jianxin, Gao Guo, Shen Guangdi, Du Jinyu, Wang Dongfeng, Zhang Shiming, Yuan Ying. SiGe/Si Heterostructure Bipolar Transistors (HBTs) with fT up to 9GHz[J]. Journal of Beijing University of Technology, 1996, 22(4): 55-59.
    Citation: Zou Deshu, Chen Jianxin, Gao Guo, Shen Guangdi, Du Jinyu, Wang Dongfeng, Zhang Shiming, Yuan Ying. SiGe/Si Heterostructure Bipolar Transistors (HBTs) with fT up to 9GHz[J]. Journal of Beijing University of Technology, 1996, 22(4): 55-59.
    shu

    fT为9GHz的SiGe/Si异质结双极晶体管

    SiGe/Si Heterostructure Bipolar Transistors (HBTs) with fT up to 9GHz

      摘要
    • 摘要: 叙述了SiGe/Si异质结双极晶体管(HBT)的设计考虑,双台面结构的制作方法,并制作出fT为9GHz的SiGe/SiHBT。同时根据对不同尺寸HBT的测试结果得到分布参数是影响fT的重要因素之一。

       

      Abstract: SiGe/Si HBT's design is considered; the processing of a double mesa struncture is discussed. SiGe/Si HBTs with different sizes are fabricated, in which the maximum fT is up to 9GHz. Measurement shows that the distribution parameters are the main factors which influcence fT.

       

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