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    吉元, 李英, 钟涛兴, 李志国, 程尧海, 孙英华, 郭伟铃, 朱红. SiO2介质覆盖层对Al-Cu膜晶粒生长的影响[J]. 北京工业大学学报, 1998, 24(1): 13-17.
    引用本文: 吉元, 李英, 钟涛兴, 李志国, 程尧海, 孙英华, 郭伟铃, 朱红. SiO2介质覆盖层对Al-Cu膜晶粒生长的影响[J]. 北京工业大学学报, 1998, 24(1): 13-17.
    shu
    Ji Yuan, Li Ying, Zhong Taoxing, Li Zhiguo, Cheng Yaohai, Sun Yinghua, Guo Weiling, Zhu Hong. The Effect of SiO2 Dielectric Passivation on the Grain Growth of Al-Cu Film[J]. Journal of Beijing University of Technology, 1998, 24(1): 13-17.
    Citation: Ji Yuan, Li Ying, Zhong Taoxing, Li Zhiguo, Cheng Yaohai, Sun Yinghua, Guo Weiling, Zhu Hong. The Effect of SiO2 Dielectric Passivation on the Grain Growth of Al-Cu Film[J]. Journal of Beijing University of Technology, 1998, 24(1): 13-17.
    shu

    SiO2介质覆盖层对Al-Cu膜晶粒生长的影响

    The Effect of SiO2 Dielectric Passivation on the Grain Growth of Al-Cu Film

      摘要
    • 摘要: 观察和分析了微电子器件SiO2介质覆盖层对Al-Cu金属化系统可靠性的影响.在1.2×106A/cm2、300℃、N2气氛保护的电徙动实验条件下,SiO2覆盖层影响着Al-Cu膜互连线的形态和晶粒尺寸,使Al-Cu膜晶粒尺寸从0.5~1.01μm长大至2~3μm;从而有效地提高了Al-Cu膜的电徙动寿命.

       

      Abstract: The effect of the SiO2 dielectric passivation on the reliability of an Al-Cu metallization of microelectronic devices was observed and analyzed. As it turned out, the grain size and morphology of Al-Cu interconnects are influenced by the SiO2 passivation:the temperature rise and the grain grows from 0.5~1.0μm to 2~3μm, and in turn, theelectromigration lifetime of the Al-Cu film is effectively improved under the conditions of 1.2×106 A/cm2 and a the temperature of 300℃ in N2 ambient.

       

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