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    郭伟玲, 廉鹏, 丁颖, 李建军, 崔碧峰, 刘莹, 邹德恕, 沈光地. 红色AlGaInP激光器的特性及热特性分析[J]. 北京工业大学学报, 2002, 28(4): 423-425.
    引用本文: 郭伟玲, 廉鹏, 丁颖, 李建军, 崔碧峰, 刘莹, 邹德恕, 沈光地. 红色AlGaInP激光器的特性及热特性分析[J]. 北京工业大学学报, 2002, 28(4): 423-425.
    shu
    GUO Wei-ling, LIAN Peng, DING Ying, LI Jian-jun, CUI Bi-feng, LIU Ying, ZOU De-shu, SHEN Guang-di. Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis[J]. Journal of Beijing University of Technology, 2002, 28(4): 423-425.
    Citation: GUO Wei-ling, LIAN Peng, DING Ying, LI Jian-jun, CUI Bi-feng, LIU Ying, ZOU De-shu, SHEN Guang-di. Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis[J]. Journal of Beijing University of Technology, 2002, 28(4): 423-425.
    shu

    红色AlGaInP激光器的特性及热特性分析

    Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis

      摘要
    • 摘要: 设计和制备了λ=680 nm的红色AlGaInP/GaInP应变量子阱激光器.制得的未镀膜20μm脊型条形红色激光器的输出功率达到100 mW,斜率效率0.56 W/A,垂直和平行远场发散角分别为31°和9°.未镀膜4μm深腐蚀器件的功率可达10 mW,斜率效率为 0.4 W/A,峰值波长为681 nm,峰值半宽为0.5nm.不同腔长器件的特性显示器件的内损耗为4.27/cm,内量子效率达45%.对不同腔长的器件进行了变温测试,得到器件的特征温度为120~190 K.

       

      Abstract: AlGalnP/ GalnP strained Quantum well laser device emitting at about 680 nm wavelength has been fabricated and analyzed. Slope efficiency of 0.56 W/A and strip red output power as high as 100 mW, vertical and parallel far field divergence angle of 31° and 9° respectively are obtained for 20 μm ridge laser device without coating. For a 4 μm uncoated deep eroded laser device, the slope efficiency is 0.4 W/A, the output power about 10 mW, the peak wavelength 681 nm and the width 0.5 nm. The characteristic temperature is between 120-190 K for the device of different cavity length. The total internal losses of those devices arc 4.27/ cm, the internal quantum efficiency is 45%.

       

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