关于面阵CCD中的硅栅分析

曾权. 关于面阵CCD中的硅栅分析[J]. 北京工业大学学报, 1980, 6(2): 32-38.

引用本文:

曾权. 关于面阵CCD中的硅栅分析[J]. 北京工业大学学报, 1980, 6(2): 32-38.

Zeng Quan. Analysis for Polysilicon Gates of Area-Array CCD[J]. Journal of Beijing University of Technology, 1980, 6(2): 32-38.

Citation:

Zeng Quan. Analysis for Polysilicon Gates of Area-Array CCD[J]. Journal of Beijing University of Technology, 1980, 6(2): 32-38.

Analysis for Polysilicon Gates of Area-Array CCD

摘要: 以R-C链型网络模型对多单元硅栅长条建立了等效电路,由此解出器件中心单元电极的延迟特性。指出中心单元的延迟特性导致的器件工作频率的极限。

Abstract: The equivalant network has been established with lumped R-C recurrent network for multi-cell polysilicon gate with lengthy band, and the delay characteristics of center cell of the device has been solved. The analysis showe that the operating frequency of devices is limited by the delay characteristics of center cell of the device.

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