王新华, 滕利臣, 王奇之, 张璇, 李迎超, 涂承媛. 电磁超声用大功率高频激励源研制[J]. 北京工业大学学报, 2016, 42(7): 961-968. DOI: 10.11936/bjutxb2015080030
    引用本文: 王新华, 滕利臣, 王奇之, 张璇, 李迎超, 涂承媛. 电磁超声用大功率高频激励源研制[J]. 北京工业大学学报, 2016, 42(7): 961-968. DOI: 10.11936/bjutxb2015080030
    WANG Xinhua, TENG Lichen, WANG Qizhi, ZHANG Xuan, LI Yingchao, TU Chengyuan. Development of the High-power High-frequency Excitation Source for Electromagnetic Ultrasonic[J]. Journal of Beijing University of Technology, 2016, 42(7): 961-968. DOI: 10.11936/bjutxb2015080030
    Citation: WANG Xinhua, TENG Lichen, WANG Qizhi, ZHANG Xuan, LI Yingchao, TU Chengyuan. Development of the High-power High-frequency Excitation Source for Electromagnetic Ultrasonic[J]. Journal of Beijing University of Technology, 2016, 42(7): 961-968. DOI: 10.11936/bjutxb2015080030

    电磁超声用大功率高频激励源研制

    Development of the High-power High-frequency Excitation Source for Electromagnetic Ultrasonic

    • 摘要: 为了提高电磁超声换能器的换能效率,采用大功率高频激励源是一种有效的解决方法. 针对提出的一种DE 类射频功率变换器技术,建立了DE类射频功率放大器拓扑结构及其电路参数的设计方法. 通过对DE类功率放大器电路仿真分析,利用TMS320F2812型数字信号处理器(digital-signal-processing,DSP)作为主控芯片,结合外围温度传感器、电流传感器、电压传感器实现了大功率高频激励源的驱动控制. 通过选取UCC27531作为金属氧化物半导体盗效应管(metal-oxide-semicondutor-field-effect-transistor,MOSFET)驱动芯片,并以IRFP460作为开关器件构建变换器主电路,实现了功率MOSFET的高速驱动. 实验结果表明:基于DE类谐振变换器设计的激励源,工作状态稳定,性能指标达到最大输出功率1.1kW、负载电压峰峰值约270V、负载电流峰峰值约26A、最高输出频率1MHz,能够满足电磁超声换能器的工作要求.

       

      Abstract: The use of high-power high-frequency excitation source is a good solution to improve the electromagnetic acoustic transducer conversion efficiency. A design method of Class-DE RF power amplifier topology and its circuit parameters was established by a proposed Class-DE RF power inverter technology. With the Class-DE power amplifier circuit simulation analysis, a TMS320F2812 digital signal processor was used as the main controller and temperature sensor, current sensor and voltage sensor were also adopted to make the system work in a controlled environment. UCC27531 was selected as the MOSFET driver chip, IRFP460 was utilized as the switching devices, and the high speed power MOSFET driver was obtained. Experiment show that the source works in a very stable condition. The source has a maximum output power of 1.1kW, a peak voltage of 270V, a load current of 26A, and a maximum output frequency of 1MHz, which can meet the work requirements of electromagnetic ultrasonic transducer. It lays a foundation for further research and development of the electromagnetic ultrasonic excitation source with higher frequency and higher power.

       

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