摘要:
通过计算多数载流子准费密能级的降落,得到比较严格的边界条件和Ⅰ-Ⅴ特性。数值计算结果表明,当高阻区宽度Wp与有效扩散长度LH的此值较小时(Wp/LH≾3),Ⅰ-Ⅴ特性大致符合exp(qVF/2kT)的规律;而当Wp/LH较大时,Ⅰ-Ⅴ特性与此完全偏离,找不出符合此规律的范围,甚至难以表达为exp(qVF/λkT)的形式。
Abstract:
By computing the drop of the quasi-Fermi level of majority carriers, the author obtained a rigorous boundary condition and thus the I-V characteristics for a forward-bias pn junction under high-level injection. The computed numerical results show that when Wp/LH<3 (WP is the width of the high-resistivity region, and LH the effective diffusion length), the I-V characteristic follows the exp (qVF/2kT) law, whereas WP/LH ≳ 3, the characteristic departs from this law, and even can not be expressed in the form of exp (qVF/λkT).
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