Abstract: High quality SiC films were deposited on Si (100) substrates by two-stage bias assisted RE sputtering. The films were characterized by Fourier transform infrared (FTIR) spectra and Atomic Force Microscope (AFM). The FTIR spectra results indicated that two-stage bias was not only helpful for enhancing the growth rate of SiC films, but also for the nucleation of films. AFM images of SiC films showed that the films prepared by two-stage bias had a better surface morphology than that by single-stage bias, because of reducing ion-etching effect on the films. So, SiC film quality was improved by using two-stage bias instead of single-stage bias.