高温大电流应力对TiAl/GaAs和TiPtAu/GaAs Schottky二极管Richardson图的影响

Effect of High Temperature and High Current Stress on Richardson Plots of TiAl/GaAs and TiptAu/GaAs Schottky Diodes

摘要: 研究了高温和大电流应力对TiAl/GaAs和TiPtAu/GaAs Schottky二极管I~V特性及对Richardson图的影响.研究发现,随着应力时间的增加,在Richardson图上,对TIAI/GaAs Schottky二极管势垒高度快速降低, Richardson常数和二极管的面积之积SA^*也快速减少,而TiPtAu/GaAs Schottky 二极管势垒高度和SA^*先快速增加,后趋于稳定常数.在I~V曲线上, TiAl/GaAs Schottky 二极管反向饱和电疣增加, TiPtAu/GaAs Schottky 二极管反向饱和电流先快速减少,后趋于常数.这是由于在金属/GaAs界面形成了金属间化合物的结果.

Abstract: Effect of high temperature and high current stress on I~V characteristics and Richardson plots of TiAl/GaAs and TiptAu/GaAs Schottky diodes are studied. It is found that as stressing time increases, for TiAl/GaAs Schottky diode, the banter height decreases rapidly, the product of Richardson constant SA^* and area S of diode decreases quickly, whereas for TiptAu/GaAs Schottky diode, the barrier height and the product of SA^* and S increase first and then trends to be a constant. In the I~V characteristics, as stressing time increases, the saturation current of TiAl/GaAs Schottky diodes increases, for TiptAu/GaAs Schottky diodes, the saturation current decreases first and then trends to be a constant. These results have been attributed to the intermetallic compounds formed formed in the metal/GaAs interface.