等离子体处理对GaN发光二极管性能影响

Influence of Plasma Treatment on Performances of the GaN-based Light-emitting Diodes

摘要: 为了研究等离子体处理对ICP刻蚀损伤的恢复效果,将多个样品放置于不同温度的等离子体增强化学气相沉积样品台上,通过改变射频源功率,分别使用N₂、N₂O和NH₃等离子体对GaN发光二极管进行处理.研究结果表明,在100℃、20 W的射频功率条件下,用N₂O等离子体处理GaN发光二极管可以极大地改善器件的光电特性;用N₂等离子体处理GaN发光二极管可以使器件的光电特性得到微弱改善;但是使用NH₃等离子体处理GaN发光二极管,会使其光电特性明显恶化.

Abstract: The authors investigated the effects of plasma treatment on ICP etch damage.The GaN-based LED was put in PECVD chamber at different temperature and treated by N₂,N₂O and NH₃ plasma under different RF power.It is observed that,in the case of 100℃and 20 W RF power,the optical and electrical characteristics of GaN-LEDs were improved after the N₂O plasma treatment,the optical and electrical characteristics of GaN-LEDs were improved slightly after the N₂ plasma treatment,while that of the GaN-LEDs were significantly degraded after the NH₃ plasma treatment.