Abstract: A 1- 6 GHz inductorless SiGe HBT wideband low noise amplifier( WLNA) with small die area and high performance was presented. The input stage was common-based amplifier with superior input impedance matching,and the noise of the common-base amplifier was cancelled by using noise cancellation technology. Common-emitter amplifier was used at the output stage. The active inductor instead of spiral inductor enabled shunt peaking for extending the bandwidth and improving gain flatness.Based on Jazz 0. 35 μm SiGe BiCMOS technology,the layout were designed. The layout occupied the die area of only 105 μm × 115 μm,and the total die area of the amplifier was much smaller than that of the amplifier with spiral inductor. With Agilent RF/MW integrated circuits simulation tools,the results show that the proposed WLNA exhibits S₂₁> 16 dB,NF < 3. 5 dB,S₁₁<- 10 dB,and S₂₂<- 10 dB in the frequency range of 1- 6 GHz. The results provide an important guide to design and develop the monolithic WLNA with small die area,low-cost and high performance for radio frequency( RF) frontend.