双极晶体管hFE低温失效分析及使用可靠性
The Analysis of Bipolar Transistor hFE Feilure Under Low Temperature and Its Reliability in Application
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摘要: 论述了影响双极晶体管电流增益hFE低温下降的重掺杂效应,结合具体器件测试并计算出了hFE的低温下降值,对实测值与计算值的差异进行了分析。最后指出了改进hFE温度特性的具体途径。Abstract: The effect of heavy doping on common emitter direct-current foreward currentgain(hFE) of bipolar transistor was investigated. hFE under low temperature was measured and calculated. And the difference between the hFE measured and the calculated were analysed. The method to improve hFE temperature dependences is pointed out based on the above work.