Si/SiGe腐蚀停止技术的研究及其在SiGe/Si HBT工艺中的应用

Study of Si/SiGe Etching Stop Technique and Its Application in Fabricating the Si/SiGe HBTs

摘要: 对SiGe/Si腐蚀停止技术进行了大量的实验研究,分析了腐蚀的化学机理,并在一定的腐蚀液浓度和温度下,获得了Si和SiGe的腐蚀速率比大于30的结果.该技术极宜在SiGe/SiHBT制作中应用.

Abstract: The experimental study on SiGe/Si etching stop technique is made and the etching mechanism is discussed.The ratio of Si layer etching rate to that of SiGe layer can be 30:1 under the condition of certain etchant and constant temperature.This SiGe/Si etching stop technique is extremely functional in fabricating SiGe/Si HBTs.