用Cr/Au/Ni/Au制备n-GaN欧姆接触

n-GaN Ohmic Contact With Cr/Au/Ni/Au

摘要: 为了获得n-GaN的低接触电阻的欧姆接触,采用Cr/Au/Ni/Au金属化系统与n—GaN形成欧姆接触,并对其不同温度下的接触电阻率进行了测试分析.室温下Cr/Au/Ni/Au的接触电阻率为0.32mΩ·m²。随着温度的升高,接触电阻率略有增加,在300℃时接触电阻率为0.65mΩ·cm²,因此此欧姆接触适合在高温下使用.

Abstract: To obtain ohmic contact to n-GaN with a low contact resistivity, Cr/Au/Ni/Au metallic system that was fabricated in n-GaN materials has been developed. The contact resistivity of ohmic contact was tested and analyzed at different temperatures. The contact resistivity of Cr/Au/Ni/Au is about 0.32 mΩ·cm² at room temperature. With the increasing of temperature, the contact resistivity of Cr/Au/Ni/Au increases a little. At 300℃, its contact resistivity is 0.65 mΩ-cm². The ohmic contact is suitably used at high temperature.