低压ZnO变阻器的研究
Study of Low Voltage ZnO Vavistor
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摘要: 研究了掺杂物对ZnO变阻器电学性能(标称电压V1mA和非线性系数α)的影响,用双肖特基势垒模型和隧道效应解释了其微量观机制,获得了V1mA<20V,α>20的低压ZnO变阻器.Abstract: The influence of various additives on the electrical properties of ZnO varister(V1mA and α) are investigated. The micromedchanism are expleined by double shottky potentical barrier and tunnel effect. A varistor of V1mA>20V and nonlinearity coefficient α>20 are prepared successfully.