薄层轻掺杂N-GaAs半导体欧姆接触研究

Study on Ohmic Contact to Thin and Low-Doped N-GaAs Semiconductor

摘要: 利用Ni/Ge/Au/Ni/Au和Pd/In两种金属结构成功地对体硅掺杂N-GaAs半导体(Nd=10¹⁸cm^-3)和离子注入N-GaAs半导体(dose=8×10¹²cm²,注入有源区深度(d=0.2μm)制成低阻欧姆接触。并对实验结果和接触机理进行了讨论。所得合金接触的接触电阻率分别为10^-6Ωcm²(10¹⁸cm^-3掺杂),和10^-3Ωcm^-2(8×10¹²cm²注入)数量级并具有长期的稳定性。接触制备方法和GaAs工艺相适。

Abstract: Ni/Ge/Au/Ni/Au and Pd/In ohmic contacts on bulk-doped N-GaAs semiconductor (Nd=10¹⁸cm^-3) and Ion-implanted N-GaAs semiconductor (dose=8×10¹²cm², implanted depth d=0.2μm are successfully fabricated. The experimental results and the contact mechanism are discussed. The alloyed contacts display long-term stability with low contact resistivity (10⁶cm² for 10¹⁸cm^-3 doping, 10^-3Ωcm² for 8×10¹²cm² implantation). The fabrication procedure is compatible with GaAs device technology.