半导体器件金属化热电徙动的温度测试

    Temperature Test of Metallization In Semiconductor Devices

    • 摘要: 在金属化布线电徙动试验中,采用金属薄膜电阻测温法精确测量了样品的局部温度,在环境温度为150℃,电流密度为3×106A/cm2和5×106A/cm2时,金属薄膜温度分别高于环境温度32.5℃和100℃;提出了扩散电阻测温法,在电徙动试验中精确测量并适时监控样品局部温度,从而实现了电流密度指数因子动态测试.

       

      Abstract: The sample temperatures were tested in the metallization electromigration experiment. The tests show: that with a metal stripe under the same oven temperature of 150℃, When current density was 3×106A/cm2, the stripe temperature was 32.5℃ higher than its ambient temperature; while the current density changed to 5×106A/cm2,the temperature of the stripe became 100℃ higher than its ambient temperature. Thus the temperature-test method of doped resistance is put forward to monitor and control accurately temperature of metal stripes, and a new dynamic current-ramp method for current density exponent is developed by this method.

       

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