SiO2介质覆盖层对Al-Cu膜晶粒生长的影响
The Effect of SiO2 Dielectric Passivation on the Grain Growth of Al-Cu Film
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摘要: 观察和分析了微电子器件SiO2介质覆盖层对Al-Cu金属化系统可靠性的影响.在1.2×106A/cm2、300℃、N2气氛保护的电徙动实验条件下,SiO2覆盖层影响着Al-Cu膜互连线的形态和晶粒尺寸,使Al-Cu膜晶粒尺寸从0.5~1.01μm长大至2~3μm;从而有效地提高了Al-Cu膜的电徙动寿命.Abstract: The effect of the SiO2 dielectric passivation on the reliability of an Al-Cu metallization of microelectronic devices was observed and analyzed. As it turned out, the grain size and morphology of Al-Cu interconnects are influenced by the SiO2 passivation:the temperature rise and the grain grows from 0.5~1.0μm to 2~3μm, and in turn, theelectromigration lifetime of the Al-Cu film is effectively improved under the conditions of 1.2×106 A/cm2 and a the temperature of 300℃ in N2 ambient.
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