红色AlGaInP激光器的特性及热特性分析

基金项目:

国家973基金资助项目(20000683-02)

国家自然科学基金资助项目(6007004)

北京市自然科学基金资助项目(4002003).

详细信息

Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis

College of Electronic Information & Control Engineering, Beijing Polytechnic University, Beijing 100022, China

摘要: 设计和制备了λ=680 nm的红色AlGaInP/GaInP应变量子阱激光器.制得的未镀膜20μm脊型条形红色激光器的输出功率达到100 mW,斜率效率0.56 W/A,垂直和平行远场发散角分别为31°和9°.未镀膜4μm深腐蚀器件的功率可达10 mW,斜率效率为 0.4 W/A,峰值波长为681 nm,峰值半宽为0.5nm.不同腔长器件的特性显示器件的内损耗为4.27/cm,内量子效率达45%.对不同腔长的器件进行了变温测试,得到器件的特征温度为120~190 K.
- AlGaInP /
- 激光器 /
- 热特性
Abstract: AlGalnP/ GalnP strained Quantum well laser device emitting at about 680 nm wavelength has been fabricated and analyzed. Slope efficiency of 0.56 W/A and strip red output power as high as 100 mW, vertical and parallel far field divergence angle of 31° and 9° respectively are obtained for 20 μm ridge laser device without coating. For a 4 μm uncoated deep eroded laser device, the slope efficiency is 0.4 W/A, the output power about 10 mW, the peak wavelength 681 nm and the width 0.5 nm. The characteristic temperature is between 120-190 K for the device of different cavity length. The total internal losses of those devices arc 4.27/ cm, the internal quantum efficiency is 45%.
- AlGaInP /
- laser device /
- thermal property

[1]	WOOD S A, MOLLOY C H, SMOWTON P M, et al. Electron transport in AlGalnP quantum well lasers[J].Appl Phys Lett, 1999, 75(12):1748-1750.
[2]	KIDOGUCHI Isao, ADACHI Hideto, FUKUHISA Toshiya, et al. Stable operation of self-sustained pulsationin650-nm-band AlGalnP visible lasers with highly doped saturable absorbing layer[J]. Appl Phys Lett, 1996, 68(25):3543-3545.
[3]	ONISHI T, IMAFUJI O, FUKUHISA T, et al. High power oeration of real refractive index guided self-alignedAlGalnP laser diodes with window structure[J]. Electronics Letters, 1999, 35(25):2208-2209.
[4]	SUMMERS H D, REES P. Thermal limitation of self-pulsation in 650 nm AlGalnP laser diodes with anepilaxially integrated absorber[J]. Appl Phys Lett, 1997, 71(18):2664-2666.
[5]	PIPREK J, ABRAHAM P, BOWERS J E. Cavity length effects n thermal loss and quantum efficiency ofmultiquantum-well lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 1999, 5(3):643-647.
[6]	BOUR D P. Quantum Well Lasers[M]. NewYork:Academic Press, 1993.