Abstract: To explore the influence of different processes on the performance of flexible low temperature polysilicon thin film transistors, the electrical characteristics and trap characteristics of thin film transistors with three different processes were compared. First, it measured the I-V characteristic curve of the device with an instrument, and extracted the V_TH, S, and μ of the device for comparison and analysis. Second, the trap was studied by the transient current method, and the transient current curve was obtained by measuring the trapping and releasing characteristics of the carrier, and the activation energy analysis obtained by changing the gate voltage and the drain voltage and combining the detrapping curve at different temperatures. Three traps at different locations were achieved corresponding to different capture processes. Results show that the process of sample A2 improves the film quality, reduces the threshold voltage and off-state leakage current of the device, and simultaneously reduces the trap concentration of the gate oxide layer; the process of sample A4 fills the dangling bonds in the interface and channel, optimizing device mobility and subthreshold swing, while reducing the trap concentration at interfaces and grain boundaries.