Abstract: To analyze the mechanism of overcurrent turn-off failure of high-voltage fast recovery diodes (FRD), three kinds of resistive connection regions at the main junction edge were designed. Overcurrent turn-off processes of high-voltage FRDs with the field shielded anode were simulated and analyzed by using the simulation tools Sentaurus TCAD, focusing on the different effects of different resistive connection regions. Simulation and experimental results show that different resistive regions can trigger the device burn-out at different locations. When the length of the resistive region increases to a certain length, the device failure can be expected to be avoid.